2N3904 MMBT390 4. MMPQ390 4 PZT3904. NPN General Purpose Amplifier. This device is designed as a general purpose amplif ier and switch. The useful dynamic range extends to 100 mA as a swi tch and to. 100 MHz as an amplifier. Sourced from Process 23.
2N3904, 2N3904 Datasheet, 2N3904 NPN General Purpose Transistor Datasheet, buy 2N3904 Transistor 2N3904 SMALL SIGNAL TRANSISTORS (NPN) FEATURES ¤ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¤ As complementary type, the PNP transistor 2N3906 is recommended. ¤ On special request, this transistor is also manufactured in the pin configuration TO-18. ¤ This transistor is also available in the SOT-23 case
NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 2N3904 fT 250 300 − − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hie 1.0 1.0 8.0 10 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 2N3904 hre 0.1 0.5 5.0 8.0 X 10−4 BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ... Datasheet (BSS138DWQ) Mechanical Data Case: SOT-363 Case Material: Molded Plastic. “Green ... 2N6004 Datasheet (PDF) 5.1. l2n600.pdf Size:395K _lrc LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), [email protected], [email protected] = 3.8Ω We declare that the material of product compliance with RoHS requirements. 2n3904 [Old version datasheet] Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO [Old version datasheet] High-Integration, High-Efficiency Power Solution Using DC/DC Converters With DVFS
2N3391 Datasheet (PDF) 1.1. 2n3390 2n3391 2n3391a 2n3392 2n3393.pdf Size:296K _fairchild_semi. Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. ON Semiconductor offers a comprehensive portfolio of innovative energy efficient power and signal management, logic, discrete, and custom semiconductor solutions. 2005 Fairchild Semiconductor Corporation BSS138 Rev C(W) BSS138. N-Channel Logic Level Enhancement Mode Field Effect Transistor. General Description. These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. 2N3904 Transistor and Specifications. 2N3904 Datasheet. 2N3904 Circuits. The 2N3904 is common general-purpose low-power NPN transistor used amplifying or switching applications. It is typically used for low-current, medium voltage, and moderate speed purposes. 2N3905 Datasheet (PDF) 1.1. 2n3905 2n3906.pdf Size:199K _motorola. MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D General Purpose Transistors 2N3905 PNP Silicon * 2N3906 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 2904, STYLE 1 CollectorEmitter Voltage VCEO 40 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 40 ... SIPMOS® Small-Signal-Transistor Features • N-channel • Depletion mode • dv/dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant • Halogen-free according to AEC61249-2-21 • Qualified according to AEC Q101 Maximum ratings, at T j =25 °C, unless otherwise specified Parameter Symbol Conditions Unit